专利摘要:
The invention relates to a system for generating a laser beam by non-linear effects comprising: a single-frequency continuous laser source, and a resonant external cavity, called a microchip cavity. According to the invention, the microchip cavity is composite insofar as it is an integral assembly of several materials comprising: - at least one non-linear crystal (5), - an input mirror (4a), - a concave mirror ( 6a) deposited on a material (6) fixed to the nonlinear crystal; the material on which the concave mirror is deposited is different from the constituent material of the nonlinear crystal, a first thermoelectric module (P2) for controlling the temperature of the non-linear crystal and at least one second thermoelectric module (P1) for controlling at least the temperature of the material on which the concave mirror is deposited.
公开号:FR3025661A1
申请号:FR1458367
申请日:2014-09-05
公开日:2016-03-11
发明作者:Thierry Georges;Nicolas Landru
申请人:OXXIUS;
IPC主号:
专利说明:

[0001] - 1 - "Nonlinear laser beam generation system based on microchip resonant cavity." The present invention relates to the generation of new wavelengths by nonlinear effects, in particular for continuous lasers of low or average power (<5W typically). Non-linear processes are very practical ways to generate wavelengths that are not very accessible from more common wavelengths. Second order generation processes such as second harmonic generation or the sum and frequency difference are known. Also known are generation processes of order 3 such as for example stimulated Raman scattering, or others. For example, it is quite easy to make lasers at 1064 nm, the materials and optical pumps necessary for this being known to those skilled in the art and available for it. By second harmonic generation, it is possible to obtain a 532 nm emission, then a 266 nm emission by a second second harmonic generation stage or a 355 nm emission by sum of frequencies between the fundamental wave (1064 nm). ) and the doubled wave (532 nm). For any laser unit, it is understood that its efficiency, representing the output power as a function of the pump power, must be optimized. The efficiency of non-linear processes, however, depends on the intensity of the optical signals. It is very important (often greater than 50%) with laser emissions from triggered lasers whose peak powers generally exceed the kW. Many commercial devices have existed for a long time. This efficiency is generally low with conventional non-linear crystals and optical powers of the order of a few watts or less. By way of example, using one of the most efficient materials for the second harmonic generation at 1064 nm, KTP, the conversion efficiency barely reaches 0.02% with a power of 1W at 1064 nm focused. on a 50pm radius in the center of a 5mm long KTP. It results in a 532 nm emission of 200 pW. This efficiency is even lower for the second harmonic generation of a 532 nm emission in the BBO to produce a deep UV emission (266 nm). To increase efficiency, it is possible to reduce the size of the beam by focusing more. But this reduces the useful nonlinear crystal length due to the strong divergence of the beam. Recent work has improved the efficiency of some non-linear crystals. The quasi-phase tuning developed on Lithium Niobate (ppLN) or KTP (ppKTP) makes it possible to reach conversion efficiencies of the order of 1% for 1W of signal at 1064 nm. But these materials are not available for example in the UV. The ppSLT exists for the sum of frequencies between 1064nm and 532nm, but its efficiency is not very high. The most effective method for exacerbating the nonlinear effects is to include the nonlinear crystal within a resonant cavity at the wavelength of the fundamental wave. This is the case when the nonlinear crystal is included in the laser cavity. Solid state lasers emitting at 532 nm or at 561 nm are an example of the inclusion of a nonlinear crystal in the laser cavity. For example, Nd: YAG pumped at 808 nm is the 1064 nm or 1123 nm amplifier. Argon lasers (gaseous) doubled in intracavity, emitting for example at 244 nm, are another example. When it is not possible to insert the non-linear crystal into the laser cavity, and if the laser is single frequency, it is possible to inject the laser emission into an external cavity and to adjust the optical length of the laser. the external cavity so as to make it resonant with the laser emission. At resonance, the power of the fundamental wave is typically amplified by a factor S (overvoltage of the cavity). The phase width of the resonance 30 is of the order of 2 t / s. In the prior art, this is the conventional way of producing a continuous source at 266 nm. Thinners of the order of 30 to 100 are usually employed in nonlinear external cavities in order to achieve conversion efficiencies of 10% to more than 30%. The external cavities are usually made by assembling and aligning at least two mirrors (Fabry-Perot cavity) and often four (in bow tie cavity cavities, "bow tie ring cavity"). in English). In such systems of the prior art, any mechanical displacement due for example to a mechanical vibration induces a change in the phase of the optical wave. A displacement 8 of one of the mirrors of a Fabry-Perot cavity induces a phase variation of 47 [8 / X, which must be much lower than 27t / S if one wishes to avoid the power fluctuations of the fundamental wave in the cavity (and therefore the wave generated by the nonlinear effects). The good functioning of the external cavity is thus translated by 8 "X / 2S. For a wavelength of 500 nm and a fineness of 50, the mechanical fluctuations must check 8 "5 nm! For a cavity 50 mm long, this amounts to a relative stability of better than 10-7. This mechanical stability is out of reach of traditional mechanical systems.
[0002] FIG. 1 shows a non-linear effects laser beam generation system according to the prior art. There is a butterfly bow cavity comprising four mirrors and a crystal LBO. The length of the cavity is enslaved to the power of the pump, the incident laser beam. To do this, a part of the incident beam is taken by reflection on a first mirror. The collected beam is then detected by one or more photodetectors via a quarter wave plate and possibly a beam splitter. The photodetectors feed a processing unit that generates a motion control signal of a second mirror by means of a piezoelectric module so as to modify the length of the cavity.
[0003] In the prior art, the cavities used for the second harmonic generation are thus electro-mechanically servocontrolled, generally by piezoelectric effect and by an error signal generation method such as that of Hânsch-Couillaud (such as illustrated in Figure 1) or that of PondDrever-Hall.
[0004] However, external cavities have technological limitations. The piezoelectric actuators used require voltages of the order of kV. The associated electronics become complex and expensive when the bandwidth exceeds the kHz. The maximum voltage of the piezoelectric actuator corresponds to a maximum intensity of the mechanical vibration that can be corrected. The maximum frequency corresponds to the maximum frequency of the vibration that can be corrected. Beyond, the servo system picks up. From the publication W. Kozlovsky et al., "Efficient Second Harmonic Generation of a Laser Diode Pumped CW Nd: YAG Laser Using 5 Monolithic Mg0: LiNb03 External Resonant Cavities", IEEE JQE Vol 24, p913, is known that when the fundamental source is insensitive to vibrations (for example with a monolithic laser) and the external cavity is also monolithic, it is possible to "thermally" enslave the external cavity on the frequency of the fundamental source.This solution is elegant and easy to implement. If the external cavity and the source are known to be realized, however, the monolithic external cavities also have limitations: First, the external cavities are closed by two reflecting mirrors and require at least one focusing element. monolithic, the mirrors are deposited directly on the nonlinear crystal and the focusing element is obtained with a polishing with a Many non-linear crystals, and in particular those which are effective in the UV such as BBO, have thermal expansions that are too great to be able to deposit dielectric mirrors therein. On the other hand, their polishing is often difficult (hygroscopy, ...) and makes the polishing with radius of curvature difficult to achieve. It is so expensive and of poor quality. It is therefore often impossible or not economical to make an external monolithic cavity. Second, many nonlinear crystals have high temperature sensitivity. This requires a more precise temperature control. Third, when the temperature acceptance of the non-linear crystal is small, it may not be possible to find a temperature that makes the cavity resonant and is in the phase-tuning range of the non-linear crystal. Fourth, many nonlinear crystals exhibit a significant walk-off, limiting the non-linear conversion efficiency and degrading the quality of the converted beam. Finally, since the temperature control is naturally slow, it is difficult to avoid power oscillations at the output of the external cavity. The present invention aims to overcome the aforementioned drawbacks 5 by proposing an external cavity of high efficiency. Another object of the invention is to allow a generation of unusual wavelengths, especially in the UV for a low power continuous laser. At least one of the above-mentioned objects is achieved with a non-linear effects laser beam generation system comprising: a single-frequency continuous laser source for generating a fundamental wave, and an external resonant cavity receiving this fundamental wave, called a microchip cavity. .
[0005] According to the invention, the microchip cavity is composite insofar as this microchip cavity is an integral assembly of several materials comprising: at least one non-linear crystal, an input mirror, a concave mirror deposited on a material fixed to the nonlinear crystal; the material on which the concave mirror is deposited is different from the constituent material of the non-linear crystal, and - a first thermoelectric module for controlling the temperature of the non-linear crystal and at least a second thermoelectric module for controlling at least the temperature of the material on which is deposited the concave mirror. The single frequency continuous laser source generates a fundamental wave which is injected into the external cavity, the latter being resonant at the frequency of the fundamental wave between the two mirrors.
[0006] The present invention thus defined allows the frequency conversion of a laser source by a microchip external cavity. The laser source may be a laser diode, possibly amplified, a microchip solid laser pumped by diode or any type of laser sufficiently stable in frequency and insensitive to mechanical vibrations. With the system according to the invention, it is now possible, with current continuous laser sources essentially in the IR, to use many nonlinear crystals and in particular those which are effective in the UV such that BBO, LBO or BiBO, which have thermal expansions 5 too large to be able to deposit dielectric mirrors; at least the concave mirror may advantageously be deposited on a material different from that of the nonlinear crystal. According to an advantageous characteristic of the invention, at least the constituent material of the concave mirror is controlled in temperature so as to optically modify the cavity and obtain resonance whatever the configuration. Furthermore, the materials of the entrance and exit mirrors may be made of glass or crystal, with a thermal expansion coefficient lower than that of the constituent material of the non-linear crystal and a polishing ability greater than that of the constituent material. nonlinear crystal. These two characteristics are of preference implemented together, however depending on the desired objectives and the materials involved, each can be implemented independently of the other. With a material that can be easily polished, the mirrors 20 can be easily removed, particularly with curvature. With at least two types of crystals in the cavity and at least two controls at different temperatures, it is possible to precisely adjust the temperature of the non-linear crystal to reach the phase agreement and the temperature of the second crystal or glass to reach the resonance of the cavity. The assembly also generally reduces the sensitivity of the resonance to the temperature of the non-linear crystal. When using the birefringence phase matching method, which is the most common case for UV generation for example, the non-linear crystal is cut off the crystallographic axes and has a spatial shift ("walk"). -off "in English) for at least one state of polarization. It is known to compensate for this effect by cutting the crystal into several pieces along the length and by rotating 180 °, around the signal propagation axis, two consecutive elements. Once the crystal is cut and turned, he is gathered again. The nonlinear crystal as defined in the present invention may be such a cut, rotated and then collapsed crystal. It is also considered a microchip assembly. In a Fabry-Perot cavity, the converted wave is emitted in both directions. It is customary to reflect one of the emissions on one of two 5 mirrors to add the two beams. But this addition is done in amplitude and can be done in phase or out of phase. If the mirror is immediately at the output of the non-linear crystal, the addition is automatically in phase. Otherwise, according to the invention, the temperature of the crystal or glass bearing this mirror can be tuned to adjust the phase.
[0007] In addition to the above, the system according to the invention may advantageously comprise a processing unit configured to control the temperature of the non-linear crystal and the temperature of at least the material on which the concave mirror is deposited at the frequency of the laser source. Preferably, the processing unit may be configured to perform temperature control only on at least one side of the resonance curve. This allows in particular to solve a problem due to the impossibility of enslaving the top of the curve. Indeed, when there is an absorption, the Fabry Perot resonance curve can become asymmetrical and it is possible that the servocontrolling takes off at the top. However, when there is no hysteresis, it is possible to achieve a servo at the top. In addition, in particular, to one or more of the above characteristics, and in order to stabilize the output power, the processing unit may also be configured to perform servocontrol using physical phenomena that are faster than the temperature of the crystals. For example, when the non-linear crystal is an electrooptical crystal, the processing unit may be configured to perform electro-optical servocontrol by directly applying a voltage to the non-linear crystal. Such a voltage application on an electro-optical crystal (sensitive to the Pockels effect) changes the phase of the cavity in an almost instantaneous manner. Still in the same objective, the processing unit may also be configured to effect a servocontrol of the phase of the fundamental wave in the external cavity by modifying the frequency of the single-frequency continuous laser source. This frequency can be varied by various means such as, for example, by changing the current of an optical pump supplying the single-frequency continuous laser source or by changing the current of a semiconductor laser used as said single-frequency continuous laser source.
[0008] The variation of the current of the optical pump or of the semiconductor laser makes it possible to rapidly vary the frequency of the fundamental wave and therefore the phase of the external cavity (which depends on the frequency).
[0009] Other types of fast servocontrol can be used. In particular, any physical effect modifying the frequency of the emission laser or the phase of the fundamental wave in the external cavity and which is faster than the thermal (a few Hz to a few hundred Hz are sufficient) can be combined with the temperature control and stabilize the output power. With the invention, it is envisaged to be able to combine a temperature control, not stable enough, with rapid servoing of low intensity. Advantageously, the microchip cavity may be an external cavity forming a Fabry-Perot interferometer, an external ring cavity, or an external cavity forming an interferometer whose reflectivity is maximum during resonance. Other cavity configurations can be implemented. In addition, in particular, to one or more of the above characteristics, the material on which the concave mirror is deposited comprises silica or fused silica (synthetic amorphous silicon dioxide, also called UV silica) or sapphire. These materials are easy to polish and have a relatively low thermal expansion and thermo-optical coefficients (dn / dT).
[0010] According to an advantageous embodiment of the invention, the non-linear crystal and the material on which the concave mirror is deposited are assembled by molecular adhesion or by bonding according to a sol-gel process, or by any other means allowing to obtain an integral assembly of the different crystals or glasses. According to the invention, provision can be made for a configuration in which the nonlinear crystal is in the form of a parallelepiped comprising two opposite faces to which the two entrance and exit mirrors are respectively fixed, the section of each of the two mirrors. being greater than or equal to the nonlinear crystal section so that said two opposite faces of the nonlinear crystal are completely covered by the two mirrors respectively. It is also possible to provide a variant in which the nonlinear crystal is in the form of a parallelepiped comprising two opposite faces to which the two input and output mirrors are respectively fixed, the section of the input mirror being smaller than the section of the crystal. non-linear so that the input face of the non-linear crystal is not completely covered by the input mirror. According to the invention, the input mirror can be deposited directly on the constituent material of the non-linear crystal or on another material 15 different from that of the non-linear crystal. In the latter case the elements are assembled by molecular adhesion or by bonding according to a sol-gel process. Other advantages and characteristics of the invention will appear on examining the detailed description of an embodiment which is in no way limitative, and the attached drawings, in which: FIG. 1 is a diagrammatic view of a resonant external cavity according to the prior art; FIG. 2 is a curve illustrating the measurement of frequency fluctuation of a microchip laser emitting at 561 nm by a Fabry-Perot interferometer; FIG. 3 is a diagrammatic view of FIG. A non-linear conversion system comprising a composite resonant external cavity according to the invention. FIG. 4 is a curve illustrating the power measured by a photodiode (in V) at the output of a microchip external cavity according to the invention formed by a crystal of BBO and mirrors deposited on silica; FIG. 5 is a graph illustrating the power measured by a photodiode (in V) at the output of the same microchip external cavity as in FIG. Previously with an electro-optical servo-control on the BBO, and FIG. 6 is a diagram of an external cavity according to the invention in the configuration of an interferometer whose reflectivity is maximum during the resonance. Although the invention is not limited thereto, examples will now be described of a linear external cavity forming a Fabry-Perot interferometer. Any microchip cavity in a ring or other type of interferometer is obviously possible. These cavities are described in such a way that they implement the nonlinear frequency doubling effect, but obviously any other effect requiring the resonance of the external cavity can be applied: sum or difference of frequencies, parametric oscillator (0P0) , Raman laser, ...
[0011] A first exemplary embodiment is described in FIG. 3 for producing a laser system emitting at 280.5 nm. The continuous laser source 1 emits at 561 nm and produces the fundamental wave 2. This continuous laser 1 is formed by the assembly of a crystal amplifier, the Nd: YAG, of a quartz crystal, a polarizer and a doubling crystal. The frequency oscillations of this laser as seen in Figure 2 show that the amplitude variations are of the order of 20 MHz and slow (period> 5s). This confirms the insensitivity of this type of sources to vibrations.
[0012] This fundamental wave 2 is injected into an external microchip cavity 3 forming a Fabry-Perot interferometer according to the invention. The cavity is made by the molecularly bonded assembly of a material 4 which is a silica substrate, a non-linear BBO crystal of 10 mm length, cut for type I phase agreement between the fundamental wave at 561 nm and the doubled wave at 280.5 nm. An inlet mirror 4a is deposited on the silica substrate 4 on one end of this substrate directly in contact with the non-linear crystal, which made it easier to design than if it had to be deposited directly on the BBO ( what remains however a possible embodiment for some applications). The silica was treated to have a reflective effect of 93% for the 561 nm wave and a reflective effect of> 95% for the 280.5 nm wave. The closure of the cavity is obtained by means of a concave mirror 6 of silica output of maximum reflectivity at 561 nm and minimum at 280 nm. The radius of curvature is 100 mm. This concave mirror 6a is disposed on one end of the material 6 which is in silica substrate. The material 6 is a substrate with a planar entry face and a curved exit face on the opposite side to the nonlinear crystal, the mirror 6a being deposited on the curved face towards the outside. It is found that the external cavity is composite since the two mirrors are deposited on silica substrates, a material different from the BBO nonlinear crystal. The first mirror is in contact with the BBO, so that the cavity starts directly on the BBO. The length L of the resonant cavity is 20mm. An optical isolator 7 prevents the wave reflected from the Fabry-Perot cavity from returning to the continuous laser 1 and destabilizing it. The system is designed so as to achieve a double servocontrol: a temperature control via two Peltier elements P1 for the mirror 6a and P2 for the nonlinear crystal controlled by a processing unit 8. The second control is of the electro-optical type. To do this, the processing unit 8 is connected to the continuous laser 1 and receives from a fast photodetector 9 a signal representative of the output UV wave at 280.5 nm. The processing unit 8 comprises at least for example a microcontroller and conventional hardware and software components enabling it to interface with the various components of the system and to set up control algorithms. With 300mW at 561 nm, an output power of more than 20mW at 280.5 nm was achieved.
[0013] The curves in FIG. 4 illustrate the power measured by photodiode (in V) at the output of a microchip external cavity formed by the BBO crystal and mirrors deposited on silica. The temperature of the silica is first increased from 22.4 ° C to 23.25 ° C and then decreased to the initial temperature. It can be seen that the resonance curve of the external cavity is asymmetrical because of a slight absorption and has a hysteresis differentiating the rise and fall in temperature. These effects prevent enslaving at the top of the curve. It can then be expected to enslave on the side of the curve. Servoing works (there is no stall) but we note that the power is not very stable with +/- 10% of variations. Thermal control therefore requires servocontrol on the flank of the resonance and is therefore not sufficiently stable. One can then advantageously add an additional system for stabilizing the output power. For the stabilization of the output power, it is possible to use the electro-optical effect of the BBO crystal. A signal below 40V peak is sufficient to reduce power fluctuations to less than 0.2% rms. In FIG. 5, the curves illustrate the power measured by photodiode (in V) at the output of the same microchip external cavity with an electro-optical servocontrol on the BBO. It is also shown that the pump current variation of a continuous laser optical pump 1 emitting at 561 nm induces a frequency variation sufficiently fast to achieve the same result.
[0014] These two examples are obviously not exhaustive. It may be advantageous according to the invention to produce an interferometer whose reflectivity is maximum during resonance. This interferometer can thus grant a diode a priori multimode on a resonant mode. This makes it possible to carry out in a simple way in particular a deep UV source at 244 nm from a GaN diode at 488 nm or at 225 nm from a GaN diode at 450 nm. Such an interferometer can be made in the manner illustrated in FIG. 6 for the case of a cavity for frequency doubling from 488nm to 244nm. There is a plane mirror 12 input, this input mirror does not fully cover the non-linear crystal 13 and reflecting at 488nm and 244nm. There is also a curved mirror 16 at the exit, reflecting at 488nm and transmitting at 244nm. The substrate 11 on which the concave mirror 16 is deposited, as well as possibly the substrate 10 on which the plane mirror 12 is deposited, is made of a material different from that of the nonlinear crystal 3025661 - 13 -. The nonlinear crystal, BBO, is in two pieces 14 and 15 rotated along the axis of propagation by an angle between 170 and 179.5 ° or 180.5 ° and 190 °. The value close to 180 ° ensures the compensation of the spatial shift related to the propagation on the extraordinary axis (e) ("walk-5 off" in English). The slightly different value of 180 ° couples weakly the extraordinary wave (e) of the first BBO crystal with the ordinary wave (o) of the second crystal. The phase tuning is obtained between the ordinary wave (o) at 488 nm and the extraordinary wave at 244 nm. The input into the microchip external cavity is via wave (e). The reflectivity is maximum when the external cavity is resonant. The present invention therefore relates to a highly efficient system for non-linear conversion (SHG, SFG, DFG, Raman, parametric oscillation, etc.) of a monofrequency continuous source in a resonant external cavity and servocontrolled on the frequency of the source. Of course, the invention is not limited to the examples that have just been described and many adjustments can be made to these examples without departing from the scope of the invention. The continuous laser source may be a single-frequency laser diode (DFB or DBR), potentially amplified by an external amplifier (fiber or not). It may be a single-frequency GaN diode The nonlinear effect implemented may be in a nonlimiting manner one of those described below: - doubling of frequency, 25 - Sum of frequencies: the first resonant frequency in the cavity external device according to the invention; the second frequency (non-resonant) passing through the external cavity, this second frequency coming from a laser oscillator that can encompass the external cavity, ... - Oscillator / parametric amplifier: the external cavity is also a cavity at parametric wavelengths or the parametric cavity encompassing the external cavity, - Oscillator / Raman amplifier.
权利要求:
Claims (13)
[0001]
REVENDICATIONS1. A system for generating a laser beam by non-linear effects comprising: a single-frequency continuous laser source for generating a fundamental wave; a resonant external cavity receiving this fundamental wave, called a microchip cavity, characterized in that said microchip cavity is composite in the measurement 10 where this microchip cavity is an integral assembly of several materials comprising: - at least one nonlinear crystal (5), - an input mirror (4a), - a concave mirror (6a) deposited on a material (6 ) attached to the nonlinear crystal; the material on which the concave mirror is deposited is different from the constituent material of the nonlinear crystal, a first thermoelectric module (P2) for controlling the temperature of the non-linear crystal and at least one second thermoelectric module (P1) for controlling at least the temperature of the material on which the concave mirror is deposited.
[0002]
2. System according to claim 1, characterized in that it comprises a processing unit configured to control the temperature of the non-linear crystal and the temperature at least of the material on which the concave mirror is deposited at the frequency of the laser source. .
[0003]
3. System according to claim 2, characterized in that the processing unit is configured to perform the temperature control only on at least one side of the resonance curve. 30
[0004]
4. System according to any one of the preceding claims, characterized in that it comprises a processing unit configured to perform a servo using physical phenomena faster than the temperature of the crystals. 3025661 - 15 -
[0005]
5. System according to any one of the preceding claims, characterized in that the processing unit is configured to provide a servocontrol of the phase of the fundamental wave in the external cavity by changing the frequency of the single-frequency continuous laser source. 5
[0006]
6. System according to any one of the preceding claims, characterized in that when the non-linear crystal is an electrooptical crystal, the processing unit is configured to perform electro-optical servo by directly applying a voltage on the non-linear crystal .
[0007]
7. System according to any one of the preceding claims, characterized in that the microchip cavity is an external cavity forming a Fabry-Perot interferometer.
[0008]
8. System according to any one of claims 1 to 6, characterized in that the microchip cavity is an outer ring cavity.
[0009]
9. System according to any one of claims 1 to 6, characterized in that the microchip cavity is an external cavity forming an interferometer whose reflectivity is maximum during the resonance.
[0010]
10. System according to any one of the preceding claims, characterized in that the material on which the concave mirror is deposited is glass or crystal, with a coefficient of thermal expansion and thermo-optical coefficients respectively lower than those of constituent material of the nonlinear crystal and a hygroscopy lower than that of the constituent material of the nonlinear crystal.
[0011]
11. System according to any one of the preceding claims, characterized in that the material on which the concave mirror is deposited comprises silica or fused silica or sapphire.
[0012]
12. System according to any one of the preceding claims, characterized in that the nonlinear crystal and the material on which the concave mirror is deposited are assembled by molecular adhesion or by bonding according to a sol-gel process.
[0013]
13. System according to any one of the preceding claims, characterized in that the input mirror is deposited directly on the constituent material of the nonlinear crystal or on another material different from that of the nonlinear crystal. 10
类似技术:
公开号 | 公开日 | 专利标题
EP3189374B1|2020-01-01|A resonant-microchip-cavity-based system for generating a laser beam via a non-linear effect
EP2503387B1|2014-01-15|Optical parametric oscillator with overlapping cavities for quick frequency scanning
FR2709381A1|1995-03-03|Parametric optical oscillator with unstable resonant cavity.
FR2671436A1|1992-07-10|INTRACAVITY OPTICAL FREQUENCY MIXTURE WITH SIGNAL RESONANCE.
FR2689694A1|1993-10-08|Frequency doubled laser, single frequency.
WO2010058136A1|2010-05-27|Device for extending the service life of a non-linear optical system subjected to the radiation of an intense laser beam and non-linear optical source including said device
FR2718256A1|1995-10-06|Optical parametric oscillator at BBO with narrow line width using extraordinary resonance.
EP2291711B1|2012-04-25|Optical wavelength conversion device, and coherent light source using same
EP1738220B9|2008-02-20|Doubly-resonant optical parametric oscillator with adapted pump recycling
EP1673839B1|2007-03-14|Laser diode-pumped monolithic solid state laser device and method for application of said device
EP2035890B1|2016-12-28|Optical parametric oscillator with achromatic phase-maintaining pump return
EP3186679B1|2019-05-08|Method and device for cavity-enhanced broadband intrapulse difference frequency generation
FR2826191A1|2002-12-20|Frequency stabilized laser source, includes laser beam passing through chemical absorption cell and subject to modulation to enable precise frequency control
EP0604303B1|2000-01-26|Coherent optical source with tunable emission
FR2589290A1|1987-04-30|DOUBLE FREQUENCY LASER BY TYPE II PHASE ACCORD
FR2961042A1|2011-12-09|OSCILLATOR GENERATING A SIGNAL COMPRISING A FREQUENCY OF THE TERA HERTZ ORDER.
WO2009125147A2|2009-10-15|Method of pumping a dual-frequency laser, associated pumping device and dual-frequency laser incorporating such a pumping device
WO2007083015A1|2007-07-26|Monofrequency intra-cavity frequency-tripled continuous laser
FR2650085A1|1991-01-25|Nonlinear device and application to a frequency doubler
FR3087905A1|2020-05-01|OPTICAL PARAMETRIC OSCILLATOR WITH CONTROLLED OPTICAL CAVITY AND ASSOCIATED METHOD
WO2012101367A1|2012-08-02|Tunable dual frequency laser cavity and method for adjusting the frequency difference between an ordinary wave and an extraordinary wave of a dual frequency laser
CN113140947A|2021-07-20|Single-frequency continuous wave tunable titanium sapphire laser based on double-refraction etalon locking
FR3042073A1|2017-04-07|USE OF A QUICK FREQUENCY SCANNING LASER SOURCE FOR HANDLING ATOMS
EP0864915A1|1998-09-16|High efficiency and high energy tunable laser source
WO2002103862A1|2002-12-27|Frequency-stabilised solid-state laser oscillator
同族专利:
公开号 | 公开日
JP2017530426A|2017-10-12|
EP3189374A1|2017-07-12|
US20170307956A1|2017-10-26|
EP3189374B1|2020-01-01|
US10108070B2|2018-10-23|
WO2016034416A1|2016-03-10|
FR3025661B1|2016-11-25|
JP6853780B2|2021-03-31|
引用文献:
公开号 | 申请日 | 公开日 | 申请人 | 专利标题
EP0503929A2|1991-03-14|1992-09-16|International Business Machines Corporation|Laser with temperature controlled harmonic generating crystal|
EP0798824A2|1996-03-26|1997-10-01|Spectron Laser Systems Limited|Microchip lasers|
EP0857997A2|1997-02-07|1998-08-12|Universität Konstanz|Tunable optical parametric oscillator|
WO2000071342A1|1999-05-26|2000-11-30|Ii-Vi Incorporated|Contacted crystal surface protector and method|
US6654392B1|2000-01-31|2003-11-25|Lightwave Electronics|Quasi-monolithic tunable optical resonator|
US4953166A|1988-02-02|1990-08-28|Massachusetts Institute Of Technology|Microchip laser|
US5027361A|1988-06-21|1991-06-25|Board Of Trustees Of Leland Stanford, Jr., University|Efficient laser harmonic generation employing a low-loss external optical resonator|
US5038352A|1990-11-13|1991-08-06|International Business Machines Incorporation|Laser system and method using a nonlinear crystal resonator|
US5581395A|1994-01-12|1996-12-03|Sony Corporation|Non-linear optical crystal element|
SE510442C2|1996-09-05|1999-05-25|Fredrik Laurell|microchip Laser|
US6173001B1|1998-02-18|2001-01-09|Massachusetts Institute Of Technology|Output couplers for lasers|
US6456424B1|2000-05-17|2002-09-24|Lightwave Electronics Corporation|Noise suppression using pump-resonant optical parametric oscillation|
AUPQ922000A0|2000-08-04|2000-08-31|Bae Systems Australia Limited|Method of constructing an optical parametric oscillator|
WO2006102084A1|2005-03-18|2006-09-28|Pavilion Integration Corporation|Monolithic microchip laser with intracavity beam combining and sum frequency or difference frequency mixing|
US9057927B2|2005-07-08|2015-06-16|Lockheed Martin Coroporation|High-power multi-function millimeter-wave signal generation using OPO and DFG|
US7570676B2|2006-05-09|2009-08-04|Spectralus Corporation|Compact efficient and robust ultraviolet solid-state laser sources based on nonlinear frequency conversion in periodically poled materials|
US7457330B2|2006-06-15|2008-11-25|Pavilion Integration Corporation|Low speckle noise monolithic microchip RGB lasers|
EP2466372A1|2010-12-16|2012-06-20|Fedor V. Karpushko|Laser system comprising a nonlinear device having a dual resonant resonator and method of operating the same|
US9515448B2|2012-09-26|2016-12-06|Raytheon Company|Microchip laser with single solid etalon and interfacial coating|
FR3025661B1|2014-09-05|2016-11-25|Oxxius|NON-LINEAR LASER BEAM GENERATING SYSTEM BASED ON CAVITY MICROCHIP RESONANT|FR3025661B1|2014-09-05|2016-11-25|Oxxius|NON-LINEAR LASER BEAM GENERATING SYSTEM BASED ON CAVITY MICROCHIP RESONANT|
EP3299884B1|2016-09-21|2019-08-07|Fundació Institut de Ciències Fotòniques|Tunable monolithic, cavity-based, frequency converter|
DE102018108953B4|2018-04-16|2019-10-24|Universität Hamburg|Method and device for frequency conversion and amplification of laser radiation by means of nonlinear media in optical resonators|
CN113465515B|2021-06-30|2022-02-08|中国人民解放军国防科技大学|Optical mechanical microcavity structure with all-optical integration and nonlinear mechanical oscillator|
法律状态:
2015-09-25| PLFP| Fee payment|Year of fee payment: 2 |
2016-03-11| PLSC| Search report ready|Effective date: 20160311 |
2016-09-22| PLFP| Fee payment|Year of fee payment: 3 |
2017-09-25| PLFP| Fee payment|Year of fee payment: 4 |
2018-09-24| PLFP| Fee payment|Year of fee payment: 5 |
2019-09-27| PLFP| Fee payment|Year of fee payment: 6 |
2020-09-28| PLFP| Fee payment|Year of fee payment: 7 |
2021-09-27| PLFP| Fee payment|Year of fee payment: 8 |
优先权:
申请号 | 申请日 | 专利标题
FR1458367A|FR3025661B1|2014-09-05|2014-09-05|NON-LINEAR LASER BEAM GENERATING SYSTEM BASED ON CAVITY MICROCHIP RESONANT|FR1458367A| FR3025661B1|2014-09-05|2014-09-05|NON-LINEAR LASER BEAM GENERATING SYSTEM BASED ON CAVITY MICROCHIP RESONANT|
JP2017531962A| JP6853780B2|2014-09-05|2015-08-19|Resonant microchip resonator-based system for generating laser beams through non-linear effects|
US15/507,618| US10108070B2|2014-09-05|2015-08-19|Resonant-microchip-cavity-based system for generating a laser beam via a nonlinear effect|
PCT/EP2015/069016| WO2016034416A1|2014-09-05|2015-08-19|A resonant-microchip-cavity-based system for generating a laser beam via a non-linear effect|
EP15759675.0A| EP3189374B1|2014-09-05|2015-08-19|A resonant-microchip-cavity-based system for generating a laser beam via a non-linear effect|
[返回顶部]